Optical, Electrical Properties and Structure of Multilayer Iron-Doped Indium–Tin Oxide Thin Films Sputtered on Preheated Glass Substrates

Multilayer iron-doped indium-saving indium–tin oxide (ML ITO50:Fe2O3) thin films with high conductivity and transmittance in the visible spectrum have been fabricated by sputtering method. Structures consisting of very layer conventional indium tin (90 mass% In2O3–10 SnO2) reduced content In2O3 (ITO50:Fe2O3) to 50 are discussed. By optimizing oxygen flow rate layer, lowest volume resistivity 3.78 × 10−4 Ω·cm, mobility 29.8 cm2/(V·s), carrier concentration 4.60 1020 cm−3 larger than 90% range achieved. ML ITO50:Fe2O3 deposited under optimal conditions demonstrated lower higher undoped multilayer ITO single-layer obtained same Q(O2) = 0.1 sccm. parameters at (Q(O2) sccm) ITO50 films. crystallized show In4Sn3O12 structure.